Thru backside laser marking duplicates alignment marks from the front to the backside to improve bonding alignment accuracy, reducing the global limitation from 50nm to 35nm. This enhances bonding process precision and improves bonding yield (related to 2.5D/4D/CoWoS/HBM technologies).
先進封裝疊對改善 - 溫控基座
To control the local temperature of the wafer/substrate to improve bonding alignment accuracy. This enhances bonding process precision and improves bonding yield (related to 2.5D/4D/CoWoS/HBM technologies).
先進封裝疊對改善 - 側向量測target
To control the local temperature of the wafer/substrate to improve bonding alignment accuracy. This enhances bonding process precision, enables structural inspection, and improves bonding yield (related to 2.5D/4D/CoWoS/HBM technologies).
